QPT, a Cambridge-based specialist in highly efficient GaN-based electric motor controls, has won a grant for a new project ...

As reliance on renewable energy generation continues to increase, a three-level converter architecture built using high-voltage SiC MOSFETs enhanced with an integrated MPS diode boosts efficiency and ...

Littelfuse has announced the SMFA asymmetrical series surface-mount TVS diode, the first TVS solution specifically designed to protect SiC MOSFET gates from overvoltage events. Th ...

The Responsible Electronics and Circular Technologies Centre (REACT) is one of five new centres announced across the UK which ...

Reliability benefits from deploying deposited gate oxides in SiC MOSFETs. BY ARNE BENJAMIN RENZ, PETER GAMMON, OLIVER VAVASOUR, VISHAL SHAH AND MARC WALKER FROM THE UNIVERSITY OF WARWICK, SUPPORTED BY ...

HexaTech, a subsidiary of Japanese firm Stanley Electric, has signed a multi-year contract with the US Defense Advanced ...

Raytheon, an RTX business, has been awarded a three-year, two-phase contract from DARPA to develop ultra-wide bandgap ...

Empower Semiconductor, a maker of integrated voltage regulators (IVRs), has announced Crescendo, a vertical power delivery ...

Our electrified world contains countless examples of energy conversion. Within this sector the GaN-based power device attracts extensive attention, thanks to its capability to switch high voltages at ...